Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Fabrication is based on focused Ga ion beam exposure and anisotropic wet etching. Electrical characteristics at 10K show Coulomb diamonds with charging energy ~27 meV, associated with a single dominant nanocrystal.
Appl. Phys. Lett. 107, 223501 (2015)