Pasar al contenido principal

IMB-CNM Thesis Defense: From Dielectric Breakdown to Memristive Switching in HfO2 Devices: Physical Characterization and Compact Modeling

Share

16 Oct 2026
11:00
Sala d'Actes Pepe Millán IMB-CNM

PhD Thesis Defense by Mercedes Saludes Tapia, predoctoral researcher at IMB-CNM (MESSI Group)

Supervisors:

  • Dr. Mireia Bargalló González
  • Dr. Enrique Alberto Miranda Castellano

Acting as tutor: Dr. Enrique Alberto Miranda Castellano

Panel of examiners:

  • President: Dr. Cirera Hernández, Albert
  • Secretary: Dr. Porti Pujal, Marc
  • Vocal: Dr. Rodríguez Montañés, Rosa
  • Substitute: Dr. Nafria Maqueda, Montserrat
  • Substitute: Dr. Estradé Albiol, Sònia

University: Universitat Autònoma de Barcelona

PhD Programme in Electrical and Telecommunication Engineering

About the thesis

This thesis investigates HfO₂-based resistive switching devices through electrical/physical characterization, statistical analysis (including Weibull and clustering), and compact modeling. It evaluates how geometry, defects, and environment affect variability and degradation, revealing the physical origins of device dispersion. To reproduce these behaviors, the QMM and DMM models are adapted—incorporating stochastic effects and multi-filament interactions—and applied to CRS structures for logic-in-memory simulations. Overall, the work connects fabrication, physical degradation, and modeling to optimize the reliability and scalability of these memristive devices.