PaNeTONE: Architecting the future of edge AI through geometry-defined analogue devices: Pre-designed Analogue Nanocylinder paths in Template-Ordered Nanoxide Electronics
https://www.imb-cnm.csic.es/en/node/1445PIXEurope: Línea Piloto de Fotónica Integrada
https://www.imb-cnm.csic.es/en/node/1446APECS: Línea piloto para encapsulado avanzado e integración heterogénea
https://www.imb-cnm.csic.es/en/node/1447PIXSpain: Centro de Competencia de Fotónica Integrada
https://www.imb-cnm.csic.es/en/node/1448MicroNanoSpain: Centro de Competencia de Semiconductores
https://www.imb-cnm.csic.es/en/node/1449Day of Women and Girls in Science 2016
Today is the First International Day of Women and Girls in Science, a day created by the United Nations to emphasise the importance of women in science and to rise the gender equality in the scientific world.
Invited IMB-CNM Talk #MdM: Cuboids: a microscale cancer model that retains key features of the tumor microenvironment
https://www.imb-cnm.csic.es/en/outreach/events/invited-imb-cnm-talk-mdm-cuboids-microscale-cancer-model-retains-key-features-tumorThe IMB-CNM, present at the YoMo a festival to promote technologies among young people
The Institute of Microelectronics of Barcelona (IMB-CNM-CSIC) will participate in the next edition of the "Youth Mobile Festival Barcelona" (YoMo), from February 27 to March 2, offering young people the opportunity to enter in a white room to make the chips that are on the mobile phones
Dispositius per apliacions de potència i ambients amb alta radiació
Científics a l'Institut de Microelectrònica de Barcelona - Centre Nacional de Microelectrònica, han desenvolupat uns transistors JFET que poden ser utilitzats en aplicacions o entorns amb una alta radiació, en els quals els JFET estàndard fallen causa de l'excés de radiació.
Switch device for high power and radioactive environments
Scientists at the Institute of Microelectronics of Barcelona (IMB-CNM) have developed a novel JFET (Junction Field-Effect Transistor) which is very suitable for high-power devices and radioactive environments, where conventional JFET fail.