Remarkable IMB-CNM participation in the Second Workshop on Memristors
Held in Barcelona during the last week of June, researcher Mireia Bargalló González was Chair of the organizing committee and Mercedes Saludes won the award for Best PhD Oral Presentation
Memristors are becoming important components in electronics, with applications in information storage, neural networks, in-memory computing, and cryptography. Since HP’s first practical implementation in 2008, research has expanded worldwide, focusing on materials development, modeling, simulation, circuit integration, and system-level applications. These topics were at the core of the Second Workshop on Memristors, held in the Residència d’Investigadors in Barcelona from June 30 to July 1, where IMB-CNM made a remarkable contribution.
Researcher Mireia Bargalló González was Chair of the organization, alongside Juan B. Roldán, from Universidad de Granada; and IMB-CNM researcher Francesca Campabadal was a member of the Scientific Committee. This technology is among the diverse research areas actively explored at the institute, mainly by members of the MicroEnergy Sources and Sensor Integration Group (MESSI) and the Integrated Circuits and Systems Group (ICAS). IMB-CNM's efforts focus on the design, fabrication, characterization, and simulation of memristors based on high-k dielectrics and printed technologies.
A highlight of IMB-CNM's participation was the Best PhD Oral Presentation Award, awarded to predoctoral researcher Mercedes Saludes Tapia for her work on the influence of the Ti/HfO₂ thickness ratio on resistive switching characteristics.
IMB-CNM researchers presented four scientific contributions, two oral presentations and two posters. Participants included Carme Martínez, Cristian Ferreyra, Miguel Zabala, Mercedes Saludes, and Zhenhua Su.
Oral Presentations
- The role of the Ti/HfO₂ thickness ratio in the resistive switching characteristics: experimental and simulation study
M. Saludes-Tapia, F. Campabadal, E. Miranda, M.B. González
- Comprehensive Analysis of Complementary Resistive Switching in Ti/HfO₂-Based Memristive Systems
C. Ferreyra, F. Campabadal, M.B. González
Poster Presentations
- Fully inkjet-printed memristors based on cross-linked poly(4-vinylphenol) insulating layer
L. Navarro, C. Ferreyra, S. Pérez, E. Ramon, F. Campabadal, M.B. González, C. Martínez Domingo
- Resistive switching behavior, variability, and stability in Ti/HfO₂ and Ti/HfO₂/Al₂O₃-based memristors
Z. Su, C. Ferreyra, E. Ramon, F. Campabadal, M.B. González
