"Pepe" Millán: the legacy of one of the pioneers of power microelectronics in Europe
Researcher José Millán is a key figure in the history of the IMB-CNM, where his influence remains strong. He led a research group, served as deputy director, and the institute's auditorium is named after him
Last May marked the tenth anniversary of the death of José Millán, a CSIC research professor and one of the leading figures in microelectronics at the Institute of Microelectronics of Barcelona (IMB-CNM). Known both within and outside the institute as “Pepe Millán,” his scientific career was instrumental in establishing the IMB-CNM as a leading European center in the field of power microelectronic devices based on silicon and wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN).
His influence at the institute remains very much alive today. In recognition of his scientific and personal contributions, the IMB-CNM auditorium bears his name, the “Sala d’Actes Pepe Millán” (Auditorium), an iconic space at the institute that commemorates his legacy and his contribution to the institute’s development since its inception, as well as to microelectronics at the national level. In addition, Millán led a research group at the institute and served as the center’s deputy director on two occasions, first from 1999 to 2003 and then from 2006 to 2008.
A career linked to power
José Millán, born in 1948 (Terrer, Zaragoza), studied physics at the University of Navarra and completed his doctoral dissertation in the Department of Physics at the Autonomous University of Barcelona on MIS (Metal insulator semiconductors) structures, under the supervision of Professor Francesc Serra Mestres, who would also become one of the "founders" of the National Microelectronics Center and its second director. Between 1980 and 1987, he also served as an assistant professor at the UAB.
From the very beginning of his research career at the CNM (now IMB-CNM) in 1985, José Millán established and led a group dedicated to research on silicon-based power devices, primarily developing insulated-gate transistors such as VDMOS and IGBTs. Known as the Power Devices and Systems Group, it was a pioneer in Spain and remains an integral part of the institute to this day.
Later, he led some of the pioneering work on wide-bandgap (WBG) semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN)—technologies that are now key to the electrification and development of more energy-efficient industrial systems. His scientific vision played a decisive role in positioning the IMB-CNM as one of Europe’s leading centers in this field.
His research was characterized by a combination of fundamental research and industrial application in areas such as high-voltage devices, automotive electronics, power converters, and efficient electronic systems. Throughout his career, he published nearly 300 scientific papers and participated in numerous European projects and strategic initiatives related to power electronics.
In this regard, he played a key role in the initial launch of the European Center for Power Electronics (ECPE), a European platform that connects research centers and industry in the field of power electronics and has become one of the sector’s leading European platforms. His commitment to collaboration between research and industry helped strengthen the IMB-CNM’s international profile and establish new European partnerships in emerging technologies.
Among other strategic initiatives, José Millán also coordinated the Consolider RUE project, with a budget of 3.5 M€ and the participation of eight Spanish universities and research centers, aimed at developing new efficient power electronics technologies. He also served as an external evaluator for the French CEA-LETI, one of Europe’s leading centers in microelectronics and technology transfer. It is also worth noting that in 2009 he served as General Chair of the IPSSD (International Symposium on Power Semiconductor Devices and ICs), the world’s leading conference in the field of power semiconductor devices (see images in the gallery below).
Human and academic leadership
Beyond his scientific contributions, Pepe Millán left a profound human and academic mark on the IMB-CNM. Several generations of researchers at the center began or solidified their careers under his scientific and personal influence. His legacy remains fully alive today, both through the impact of his publications and the continuity of the research lines he championed.
Throughout his career, he supervised nine doctoral thesis. Many of his doctoral students went on to become established researchers, university professors, or R&D leaders at companies in the sector, and they subsequently supervised new doctoral dissertations, creating a scientific school with intergenerational continuity and branches in numerous academic institutions and technology centers, both nationally and internationally.
The World's Top 2% Scientists List
As evidence of this lasting impact, José Millán continues to appear in the 2025 edition of the international World’s Top 2% Scientists ranking, compiled by Stanford University and Elsevier, which identifies the world’s most influential scientists based on the impact of their scientific publications. In this edition, he ranks 2,388th in the subfield of Applied Physics.
The IMB-CNM’s presence in this ranking is further strengthened this year with the inclusion of Amador Pérez-Tomás, a researcher in the same Power Devices and Systems (PDS) group, who also enters the ranking at position 2,554 in the same subfield.
This recognition highlights the continuity, excellence, and relevance of the scientific and technological legacy championed by Pepe Millán in the field of power electronics and advanced semiconductor devices.
