A new perspective towards the understanding of the frequency-dependent behavior of memristive devices
New paper published in the journal IEEE Electron Device Letters by the ATDF members of the MESSI group in collaboration with the NANOCOMP group of the Universitat Autònoma de Barcelona (UAB).
The memory window collapse of TiN/Ti/HfO2/W resistive switching devices at high frequencies and small signal amplitudes has been demonstrated through extensive experimental results and their features have been analyzed by means of a powerful phenomenological model developed by the UAB researchers. The shrink in resistance window as frequency increases is attributed to the incapability of ions/vacancies to follow the electrical stimulus. These results have been reported in a paper published in IEEE Electron Device Letters.
The proposed approach provides a clear connection between the resistive switching effect in real devices and the original memristor theory.
"This new understanding of the frequency-dependent behavior of memristors gives useful information for circuit designers and application engineers for the advancement of novel memristive applications," explains Mireia Bargalló González, one of the authors and member of the MESSI group.
Memristors are emerging devices for a wide variety of applications
Resistive switching devices, also called memristors, are metal– insulator–metal (MIM) structures that exhibit a typical pinched hysteresis current–voltage loop. These emerging devices are currently being explored for a wide variety of potential applications including nonvolatile data storage and digital logic circuits and for hardware security purposes.
In recent years, memristors have attracted an intense research effort to assess their potential as artificial synapses in brain-inspired (neuromorphic) systems whose aim is to replicate brain functions, such as learning from experience, reasoning, or decision-making.
M. Maestro-Izquierdo, M. B. Gonzalez, F. Campabadal , J. Suñé , Fellow IEEE, and E. Miranda, Senior Member IEEE. A New Perspective Towards the Understanding of the Frequency-Dependent Behavior of Memristive Devices. IEEE ELECTRON DEVICE LETTERS, Vol. 42, No. 4, April 2021 565. DOI: 10.1109/LED.2021.3063239