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L’Institut de Microelectrònica de Barcelona participa en la Nit Europea de la Recerca
Amb l’objectiu d’apropar la recerca en microelectrònica a la societat, el centre va organitzar i participar de xerrades i tallers de divulgació científica.
Institute of Microelectronics of Barcelona researcher, Gonzalo Murillo, receive "la Caixa" 2019 research grants
The researcher of the reference center in microelectronics in the country has received a Junior Leader Retaining research grant, in the postdoctoral fellowships call.
Huawei visits CNM
Liu Fancheng and Kai Xin from Huawei's Central Research Institute Watt Lab meet Luis Fonseca´s Group at IMB-CNM and IREC co-workers in search of advanced thermoelectric technologies.
Switch device for high power and radioactive environments
Scientists at the Institute of Microelectronics of Barcelona (IMB-CNM) have developed a novel JFET (Junction Field-Effect Transistor) which is very suitable for high-power devices and radioactive environments, where conventional JFET fail. Due to its particular configuration, the device presents very high radiation hardness.