Power module electronics in HEV/EV applications: New trends in wide ban-dgap semiconductor technologies and design aspects

This paper presents an in-deep review of the state of the art concerning power modules, identifying the electrical requirements for the modules and the power conversion topologies that will best suit future HEV/EV drives. Current wide band-gap (WBG) technologies such as SiC and GaN, are reviewed and, after a market analysis, the most suitable power semiconductor devices are highlighted. Among them, it can be concluded that JBS diodes and MOSFETs are the most adequate for this application, because they can substitute traditional Si FRD diodes and Si IGBTs, providing lower power losses and higher operation temperatures. The migration from Si IGBTs to the aforementioned technologies would be simpler than expected, as the same firing circuitry (with minor modifications) can be reused. The paper, also focuses on practical design aspects of the module, such as optimum WBG die parallelization, placement and ceramic substrate routing. This work has been developed in a collaboration between the Teknologia Elektronikoa Saila - Bilboko Ingenieritza Goi Eskola Teknikoa - UPV/EHU and the Power Devices and Systems Group from IMB-CNM(CSIC).
Renewable and Sustainable Energy Reviews, vol. 113, October 2019