Equipment and processes of the Metallization Area

Physical Vapor Deposition on Sputtering Systems

KENOSISTEC KS800H:

• Sputtering system to deposit metallic layers on 100 mm or 150 mm wafers.
• Process chamber with three (200 mm) circular planar magnetron cathodes.
• Available targets: Al_99.5/Cu_0.5, Ti and Cu.
• Load lock chamber with semi-automatic loading system.
• DC power and RF for sputter etching.
• Possibility to process CMOS or MNC wafers (MNC without etching).

Material Research Corporation-MRC 903:

• Sputtering system to deposit metallic layers on a 30 x 30 cm² pallet surface (up to nine 100 mm wafers or up to four 150 mm wafers).
• Process chamber with three cathodes (two are rectangular planar magnetron-type and the other is a rectangular planar diode).
• Available targets: Au, Ni and Ti.
• Load lock chamber with semi-automatic loading system.
• DC power for Ti/Ni and RF power for Au. Also RF for sputter etching.
• Aimed at MNC wafers.

KENOSISTEC KS500C:

• Sputtering system to deposit metallic and semiconducting layers on 100 mm or 150mm wafers.
• Process chamber with three cathodes (75 mm) magnetron circular planar in confocal configuration.
• Available targets: W, Ti, Ta, Si and TaSi₂
• Load lock chamber with semi-automatic loading system.
• DC power supply source plus RF power supply for one cathode (to deposit Si). Possibility to sputter etching (RF).
• Possibility to process CMOS and MNC wafers (MNC without etching).

LEYBOLD HERAEUS Z-550:

• Sputtering system to deposit metallic layers on 100 mm wafers.
• Process chamber with a circular planar magnetron cathode.
• Available targets: Al, Al_98.75/ Cu_0.5 /Si_0.75 and TaSi₂.
• Load lock chamber and manual loading system.
• DC power supply source. Possibility to sputter etching (RF).
• Possibility to process CMOS or MNC wafers (MNC without etching).

KENOSISTEC KS800HR:

• Sputtering system to deposit metallic and non-metallic layers on 100 mm, 150 mm wafers.
• Process chamber with four (200 mm) circular planar magnetron cathodes.
• Available targets: Al, Al_99.5/Cu_0.5, Ti, W, Si, AlN, TiN, Si₃N₄, SiO₂
• Load lock chamber with semi-automatic loading system.
• Possibility to heat samples up to 400 ºC
• Pulsed DC and RF power supply sources, plus RF for sputter etching.
• To process MNC samples

BIO RAD E-5000 Polar Division:

• Sputtering system to deposit gold layers for scanning electron microscopy.
• Possibility to change distance and current.
• Stopwatch to time control.

Physical Vapor Deposition on Evaporation and E-Beam Systems

OERLIKON UNIVEX 450B:

• One electron gun source with four pockets and two thermal sources.
• Maximum sample area size: 150 mm.
• Process chamber capacity up to four wafers (Manual loading system without load lock chamber)
• Available materials: Ag, Al, Al₂O₃, Au, C, Cr, Cu, Fe, Ge, Hf, ITO, Mo, Nb, Ni, Pd, Pt, Ta, Ti, W, ZnO and Zr.
• Possibility to heat samples up to 500ºC.
• Residual gas Analyzer.
• Available deposition in low O₂ pressure.
• To process MNC samples.

KENOSISTEC KE500E:

• One electron gun source with four pockets.
• Maximum sample area size: 150 mm.
• Process chamber capacity limited to one wafer (manual loading system without load lock chamber).
• Available materials: Al, Cr, Ti.
• Exclusively to process CMOS samples.

LEYBOLD UNIVEX 400:

• One electron gun source with eight pockets
• One i-gun source.
• Maximum sample area size: 150 mm.
• Process chamber capacity of one wafer with load lock chamber.
• Possibility to cool samples between -20 and 100 ºC.
• Possibility to sample rotation during deposition
• Available materials: In test: (Ti, Au, Al)
• To process MNC samples.

• Leyre Martínez de Olcoz Sainz (ext. 435563) 
• Marc Isart Alemany (ext. 435690)
• Alberto Garcia (ext. 435556)