Equipment and processes of the Photolithography Area

Resist coating and developer equipment

• GAMMA80 Süss automatic pick&place system for coating and developing photosensitive resists on 100 and 150mm wafers (CMOS line).
• One LabSpin6 manual spin coater for positive and negative resists on 50, 100 and 150mm wafers (CMOS line).
• A Delta20 manual Spin coater for positive and negative resists for chips and wafers from 50 to 150mm (CMOS and MNC line available in qualified self-service).
• One Delta80 manual spin coater with Gyrset system for SU8 and transparent polymers for 100mm wafers (CMOS and MNC line available in qualified self-service).
• Two Laurell WS650Mz manual spin coaters for polyimide coating and special processes on chips and wafers from 50 to 150mm (MNC line available in qualified self-service).
• One Laurell WS400A manual spin coater for positive and negative resists for chips and wafers from 50 to 100mm (MNC line available in qualified self-service).
• A GBC 3500 PRO series laminator for ADEX and SUEX processes on wafers from 50 to 150mm (MNC line available in qualified self-service).
• A Laurell WS400A automatic spray developer for 50 to 100mm wafers with OPD4262 developer based on TMAH (MNC line).
• One chemical bench for manual resists developer with deionized water cascade (CMOS line).
• Two chemical benches for manual resists development, one of them with deionized water cascade (MNC line available in qualified self-service).

Lithographic process equipment 

• Two manually loaded contact/proximity mask aligners KS MA6/BA6 (g-i line and i-line), with possibility of double-sided alignment and with critical dimension of 1μm on 100 and 150 mm wafers (CMOS g-i line and MNC i-line available in qualified self-service).
• A KS MA150cc contact/proximity mask aligner (LED lamp g-h-i line) with automatic loading and alignment, with the possibility of double-sided alignment and with a critical dimension of 1μm on 100 and 150 mm wafers (CMOS line).
• A Stepper NSR 2205i12D i-line, with critical dimension up to 350nm with maximum exposure range of 22x22mm area for 6''x 6''x 0.25'' reticles on 100 and 150mm wafers (CMOS line).
• A KLOÉ Dilase 650 i-line direct laser lithography system, with 70mw@375nm diode laser and critical dimension of 1μm, with an exposure area range of 3x3 mm² and with support for DXF,LWI,GDSii formats. (CMOS-MNC line available in qualified self-service).

Resists and polymers annealing and curing equipment

• Seven Heraeus ovens for sample drying and annealing of resists and polymers (4 for CMOS Line and 3 for MNC Line)
• One Ovenvan oven with nitrogen flow and temperature ramp programming for polyamide curing (MNC Line)
• Three hotplates for sample drying and annealing of resists and polymers (MNC Line available in qualified self-service)
• One JP Selecta programmable hot plate for SU8 curing ramps (MNC Line available in qualified self-service)
• Two UV curing equipment (CMOS and MNC Line available in qualified self-service)

Wafer and mask cleaning equipment

• One OEM Group R&D with touch screen for 100mm wafers (CMOS Line)
• Two R&Ds Semitool for 100mm wafers (MNC Line) and 150mm wafers (CMOS Line)
• One OBDUCAT QS W 300SM automatic mask cleaning system for 5x5 and 7x7 inch masks, using pyranha and RCA1 mix, incorporating Megasonic and including rinsing and drying (CMOS Line).

• Javier Sánchez (Ext. 435560)
• Luis Rull (Ext. 435689)
• Héctor Cabezas (Ext. 435574)
• Alberto Del Moral (Ext. 435672)
• Albert Guerrero (Ext. 435562)