Equipment and processes of the Dry Etching Area

The Dry Etching Area is the area where plasma etching techniques are carried out on different materials used in microfabrication.

Techniques

  • Metal etching
  • Semiconductors
  • Polymers
  • Deep silicon etching with HAR
  • Etching for silicon nanostructures

Equipment and Available capabilities

Alcatel 601 E

  • Automatic single-wafer up to 100 mm
  • ICP Gen. up to 2000 W - 13,56 MHz 
  • RF Gen. up to 500 W - 300 KHz
  • Gas lines: SF6, C4F8, He, O2
  • 2 mechanical pumps 2 turbomolecular pumps
  • Wafers thermalization: -110°C to 40°C (N2 dewar); He-backside contact 
  • Bosch process
  • Layer etching: Silicon, polysilicon, W and TaSi 

OXFORD PLASMALAB S-100 no CMOS

  • Automatic multiwafer up to 100 mm. Two chambers
  • ICP Gen. to 5000 W-2 MHz and ICP Gen. up to 3000 W-13.56 MHz
  • RF Gen. up to 600 W-13,56 MHz
  • Gas lines: N2, O2, He, SF6, Cl2,.
    • Chamber 1: HBr, BCl3, Cl2, SF6, N2, He, Ar
    • Chamber 2: SF6, O2
  • 3 mechanical pump 2 turbomolecular pump
  • Wafers thermalization: 20°C to 60°C; He-backside contact
  • Layer etching: Group III-V compound semiconductors, SiC, diamond and photoresist stripping

Aplied Materials P5000

  • Industrial platform 3 chambers up to 150 mm
  • Magnetic field assisted, up to 90G – MERIE
  • 3 RF Gen. up to 1250 W - 13,56 MHz
  • 3 mechanical pumps 3 turbomolecular pumps
  • Gas lines: 
    • Chamber A: CF4, C2F6, He, CHF3, Ar
    • Chamber B: C4F8, CF4, C2F6, O2, He, CHF3, Ar
    • Chamber C: HBr, Cl2, CF4, He/O2, SF6, N2
  • Layer etching: Polysilicon, SiO2, Si3N4 

Alcatel AMS-110 DE no CMOS

  • Automatic single-wafer up to 100 mm
  • ICP Gen. up to 3000 W - 13,56 MHz 
  • RF Gen. up to 600 W - 300 KHz
  • RF Gen. Up to 500 W LF
  • Gas lines: SF6, C4F8, He, O2 CH4, Ar
  • 1 mechanical pumps 1 turbomolecular pumps
  • Wafers thermalization: -10°C to 420°C; He-backside contact 
  • Bosch process
  • Layer etching: Silicon, polysilicon, W, TaSi, SiO2, Si3N4, Al2O3, HfO2, TiO2, GaO, pyrex, polyimide, Graphene 

SENTECH SI 500 No CMOS

  • Automatic single-wafer up to 150 mm MNC
  • ICP Gen. up to 2000 W - 13,56 MHz 
  • RF Gen. up to 600 W – 13,56 MHz
  • Gas Lines: SF6*, C4F8*, CF4, O2*, He, Ar. (* Duplicate massflows)
  • 2 mechanical pump 1 turbomolecular pumps
  • Temperature: -15ºC up to 80ºC. He-backside thermalization
  • Bosch process
  • Layer etching: Silicon, SiO2, Si3N4, polyimide, graphene 

SENTECH SI 500 SI

  • Automatic single-wafer up to 150 mm MNC
  • ICP Gen. up to 2000 W - 13,56 MHz 
  • RF Gen. up to 600 W – 13,56 MHz
  • Gas lines: SF6*, C4F8*, O2*, He, Ar. (* Duplicate massflows)
  • 2 mechanical pump 1 turbomolecular pumps
  • Temperature: -15ºC up to 80ºC. He-backside thermalization
  • Bosch process
  • Layer etching: Silicon, SiC

SENTECH SI 500 CL

  • Automatic single-wafer up to 150 mm MNC
  • ICP Gen. up to 2000 W - 13,56 MHz 
  • RF Gen. up to 600 W – 13,56 MHz
  • Gas Lines: Cl2, BCl3, Ar, N2, O2, He
  • 2 mechanical pump 1 turbomolecular pumps
  • Temperature: -15ºC up to 80ºC. He-backside thermalization
  • Optical end point detection
  • Layer etching: Group III-V compound semiconductors

ALCATEL GIR 160

  • Parallel plate RIE manual single wafer up to 150 mm
  • RF Gen. up to 500 W – 13,56 MHz
  • Gas lines: SF6, CHF3, CF4, O2, He, N2
  • 1 mechanical pump 1 turbomolecular pump
  • No control temperature
  • Layer etching: Silicon, Polysilicon, SiO2, Si3N4, SiC, TaSi

Download the tecniques and capabilities of the Dry Etching Area

Clean Room Dry Etching

Check the Dry Etching Area

Dry Etching Team

  • Roser Mas (ext. 435570) 
  • Carles Mateu (ext. 435569) 
  • Samuel Dacunha (ext. 435571)​
Foto de grupo de Grabado Seco