Institute of Microelectronics of Barcelona IMB-CNM   

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Micro and Nanotechnology research for you

  • IMB-CNM Microelectronics Research and Development centre in Spain

  • Research groups dedicated to the field of Micro and Nano Integrated Systems

  • Integrated Clean room for Micro and Nano fabrication

  • IMB-CNM scientific papers published in journals

  • Image IMB-CNM

Welcome to the IMB-CNM

IMB-CNM

Welcome to the web page of the Barcelona Microelectronics Institute of the National Microelectronics Centre-CSIC.

Micro/Nano electronics, Photonics and Smart Systems have been identified by the European Commission as a fundamental part of the KETS-Key Enabling Technologies, which are the basis for the improvement of the innovation capability of the European industry. These technologies have a high economic potential and the capability to contribute to solve the current societal challenges.

Electronic systems are part of our lives for several decades now. The evolution of microelectronics has enabled its introduction as an essential part of multiple products that can benefit any sector of the economy, by including properties such as a higher product intelligence or more sustainability.

The IMB-CNM aims to contribute to these goals with a high level set of researchers and facilities, unique in the South of Europe. Not only we can offer our know-how to collaborate with you on designing and fabricating new micro and nanoelectronics components, circuits and systems, but also we can provide you education and training at the different stages of your scientific or engineering career. IMB-CNM is a research centre belonging to CSIC, placed in Barcelona and, more specifically being part of the Campus of Excellence of the Universitat Autònoma de Barcelona (UAB), that is a cluster of scientific activity that may perfectly fit with your needs.

We thank you for visiting the web site of our institute and we hope that the R&D activities that we are doing can be of your interest. Please feel free to contact us for any collaboration or visit in which you may be thinking of.

News & Events

Science Week in November


 EVENTS  2017-10-25 

IMB-CNM Thesis Defense: Analysis of Bidirectional Switch Power Modules for Matrix Converter Application - PhD student: José-Luis Gálvez Sánchez, Director: Xavier Jordà i Sanuy

Sala de Actos Pepe Millán, IMB-CNM, Campus UAB
24/10/2017 11:00am

 EVENTS  2017-10-17 

PhD student position: Investigation and development of new packaging solutions for high power devices

We propose a PhD project to be developed at IMB-CNM aimed at providing original and advanced packaging solutions solving the main problems limiting the performances of wide band-gap high power devices. The candidate must have an Engineering or a Bachelor’s degree (Electronics, Electrical, Materials Science, Physics or similar) or a Master Degree on a subject related with the topics of the subject. Additional information: https://projects.icmab.es/docfam/


 NEWS  2017-10-17 

JPhD 2017 - 3rd SCIENTIFIC MEETING OF BNC-b STUDENTS - 8 and 9th NOVEMBER 2017

We are glad to present the "3rd Scientific Meeting of BNC-b Students". The event is aimed to present the work performed by the PhD students of the whole Barcelona Nanotechnology Cluster – Bellaterra (ICMAB, ICN2, IMB-CNM, UAB, ALBA), promoting the networking between them. The event incorporates all the framework of the UAB Research Park, as well as other universities as UB or UPC. Moreover, it is also open to master and undergraduate students, and the scientific community at large.


 EVENTS  2017-09-19 

Welcome to MNE2017, to INL, to the beautiful city of Braga, and to Portugal

MNE2017 will cover all the main current activities in micro/nano engineering and for this goal, we have re-structured the conference in four areas:

>> Novel Developments in Nano/Micro Fabrication Methods and processes;
>> Fabrication and Integration of Micro/Nano Structures Devices and Systems;
>> Engineering for Physical and Chemical Applications;
>> and Engineering for the Life Sciences.


 EVENTS  2017-09-13 

Recent publications

Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
Alberto Rodríguez-Fernández et al.; IEEE Trans. Electron Dev. 64 (8) pp 3159-3166 (2017). The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current–voltage characteristics of Ni/HfO2/n+-Si RRAM devices has been investigated. In the case of 5-nm-thick oxide devices, a self-rectifying ratio of three orders of magnitude is observed after substrate injection forming (SIF) with current compliance below 500 μA. However, devices subjected to gate injection forming (GIF) do not exhibit such rectifying feature. This distinctive behavior for SIF is ascribed to the formation of a Schottky-like contact in between the Ni-based conducting filament and the semiconductor electrode.


 2017-06-30 

Impedimetric label-free sensor for specific bacteria endotoxin detection by surface charge registration
Sergi Brosel-Oliu et al.; Electroquimica Acta, 2017, vol.243, pp.142-151 An impedimetric sensor based on a three dimensional electrode array modified with consecutive deposition of Con A-glycogen-Con A layers was used for label-free detection of bacterial endotoxin: lipopolysaccharide (LPS) from Escherichia coli. Presented biosensor is able to detect bacterial LPS in a very short detection time (20 min) with 2 μg mL−1 limit of detection, which is much lower than reported for other biosensors with Con A.


 2017-05-11 

Compact Sampling Device Based on Wax Microfluidics
María Díaz-González et al.; Sensors and Actuators B 251 (2017) 93–98 This work reports on the design, fabrication and performance of a low-cost, self-contained sampling device based on a wax microfluidics technology. This sampler delivers leak- and contamination-free performance that ensures the integrity of the collected samples. Thanks to its small dimensions and low power requirements, this device is well suited for collecting samples on-board of small aerial or aquatic drones.


 2017-05-10 

Thermal Phase Lag Heterodyne Infrared Imaging for Radio Frequency Integrated Circuits Performance Degradation Analysis
X. Perpiñà et al.; Appl. Phys. Lett., 101 (2) 094101 (2017). With thermal phase lag measurements, current paths are tracked in a Class A Radio Frequency (RF) power amplifier at 2 GHz. The phase lag maps evidence with a higher sensitivity than thermal amplitude measurements, an input-output loop due to a substrate capacitive coupling. This limits the amplifier’s performance, raising the power consumption in certain components. Other information relative to local power consumption and amplifier operation is also inferred. This approach allows the local non-invasive testing of integrated systems regardless of their operating frequency.


 2017-02-27 

Highly Anisotropic Suspended Planar-Array Chips with Multidimensional Sub-Micrometric Biomolecular Patterns
J.P. Agusil et al.; Adv. Funct. Mater. 2017. The physical and chemical properties of silicon chips can be tuned to address the requirements of the research. The control of the physical anisotropy from fabrication allows obtaining chips with the desired aspect ratio, branching, faceting and size. Subsequent surface modification via wet chemistry or contact printing added two- and 3-dimensional chemical features on each microparticle. The combination of physical and chemical anisotropies provides the mean to create a myriad of customized microparticles.


 2017-02-22 

P-GaN HEMTs Drain and Gate Current Analysis under Short-Circuit
M. Fernández et al.; IEEE Electron Device Letters, 38 (4), pp. 505-508 (2017). Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under short-circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). As a main observation, a strong drain current reduction (> 70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs


 2017-02-07 

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