Institute of Microelectronics of Barcelona IMB-CNM   

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Micro and Nanotechnology research for you

  • IMB-CNM Microelectronics Research and Development centre in Spain

  • Research groups dedicated to the field of Micro and Nano Integrated Systems

  • Integrated Clean room for Micro and Nano fabrication

  • IMB-CNM scientific papers published in journals

  • Image IMB-CNM

Welcome to the IMB-CNM


Welcome to the web page of the Barcelona Microelectronics Institute of the National Microelectronics Centre-CSIC.

Micro/Nano electronics, Photonics and Smart Systems have been identified by the European Commission as a fundamental part of the KETS-Key Enabling Technologies, which are the basis for the improvement of the innovation capability of the European industry. These technologies have a high economic potential and the capability to contribute to solve the current societal challenges.

Electronic systems are part of our lives for several decades now. The evolution of microelectronics has enabled its introduction as an essential part of multiple products that can benefit any sector of the economy, by including properties such as a higher product intelligence or more sustainability.

The IMB-CNM aims to contribute to these goals with a high level set of researchers and facilities, unique in the South of Europe. Not only we can offer our know-how to collaborate with you on designing and fabricating new micro and nanoelectronics components, circuits and systems, but also we can provide you education and training at the different stages of your scientific or engineering career. IMB-CNM is a research centre belonging to CSIC, placed in Barcelona and, more specifically being part of the Campus of Excellence of the Universitat Autònoma de Barcelona (UAB), that is a cluster of scientific activity that may perfectly fit with your needs.

We thank you for visiting the web site of our institute and we hope that the R&D activities that we are doing can be of your interest. Please feel free to contact us for any collaboration or visit in which you may be thinking of.

News & Events

PH. D. GRANT OFFER to work on Low Gain Avalanche Detectors as Ultra-Fast Silicon Detectors

The Radiation Detectors group at the Microelectronics National Center (IMBCNM) located in Barcelona, Spain, is offering a grant to realize a Ph. D. in Physics.

 NEWS  2017-05-09 

Manufacturing antimicrobial fabrics and devices at industrial scale

A European project involving the Instituto de Microelectrónica de Barcelona (IMB-CNM) of the CSIC, and led by the Universitat Politécnica de Catalunya (UPC), will introduce on the market an ultrasound technology for industrial production of fabrics and surfaces coated with antimicrobial nanoparticles.

 NEWS  2017-05-05 

SEMINAR, Wednesday, 3 May, 12:00, Sala d'Actes Pepe Millán del CNM

“Generation-recombination noise in advanced CMOS and memory devices” Prof. Eddy Simoen Interuniversity Microelectronic Center, IMEC, Leuven, Belgium

 EVENTS  2017-05-03 

100 becas de introducción a la investigación para estudiantes de posgrado en el CSIC

Plazo de presentación de solicitudes: Del 18 de abril de 2017 al 9 de mayo del 2017

 NEWS  2017-04-19 

IMB-CNM (CSIC) is organizing the 23th Micromachine Summit next May 15-17

IMB-CNM (CSIC) is organizing the 23th Micromachine Summit next May 15-17, where national and supranational delegations worldwide will review the state of play of Micro and Nanotechnologies in their territories.

 NEWS  2017-03-01 

Recent publications

Impedimetric label-free sensor for specific bacteria endotoxin detection by surface charge registration
Sergi Brosel-Oliu et al.; Electroquimica Acta, 2017, vol.243, pp.142-151 An impedimetric sensor based on a three dimensional electrode array modified with consecutive deposition of Con A-glycogen-Con A layers was used for label-free detection of bacterial endotoxin: lipopolysaccharide (LPS) from Escherichia coli. Presented biosensor is able to detect bacterial LPS in a very short detection time (20 min) with 2 μg mL−1 limit of detection, which is much lower than reported for other biosensors with Con A.


Compact Sampling Device Based on Wax Microfluidics
María Díaz-González et al.; Sensors and Actuators B 251 (2017) 93–98 This work reports on the design, fabrication and performance of a low-cost, self-contained sampling device based on a wax microfluidics technology. This sampler delivers leak- and contamination-free performance that ensures the integrity of the collected samples. Thanks to its small dimensions and low power requirements, this device is well suited for collecting samples on-board of small aerial or aquatic drones.


Thermal Phase Lag Heterodyne Infrared Imaging for Radio Frequency Integrated Circuits Performance Degradation Analysis
X. Perpiñà et al.; Appl. Phys. Lett., 101 (2) 094101 (2017). With thermal phase lag measurements, current paths are tracked in a Class A Radio Frequency (RF) power amplifier at 2 GHz. The phase lag maps evidence with a higher sensitivity than thermal amplitude measurements, an input-output loop due to a substrate capacitive coupling. This limits the amplifier’s performance, raising the power consumption in certain components. Other information relative to local power consumption and amplifier operation is also inferred. This approach allows the local non-invasive testing of integrated systems regardless of their operating frequency.


Highly Anisotropic Suspended Planar-Array Chips with Multidimensional Sub-Micrometric Biomolecular Patterns
J.P. Agusil et al.; Adv. Funct. Mater. 2017. The physical and chemical properties of silicon chips can be tuned to address the requirements of the research. The control of the physical anisotropy from fabrication allows obtaining chips with the desired aspect ratio, branching, faceting and size. Subsequent surface modification via wet chemistry or contact printing added two- and 3-dimensional chemical features on each microparticle. The combination of physical and chemical anisotropies provides the mean to create a myriad of customized microparticles.


P-GaN HEMTs Drain and Gate Current Analysis under Short-Circuit
M. Fernández et al.; IEEE Electron Device Letters, 38 (4), pp. 505-508 (2017). Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under short-circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). As a main observation, a strong drain current reduction (> 70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs


Robust L-malate bienzymatic biosensor to enable the on-site monitoring of malolactic fermentation of red wines
P. Giménez-Gómez et al.; Anal. Chim. Acta 954 (2017) 105-113. The development of an amperometric biosensor for L-malate determination showing long-term stability is reported in this work. The biosensor is based on a thin-film gold electrochemical transducer and a three-dimensional membrane of polypyrrole entrapping malate dehydrogenase and diaphorase enzymes. It was applied to monitor the malolactic fermentation of three red wines, showing a good agreement with the standard colorimetric method.


Full Review William Hill