Institute of Microelectronics of Barcelona IMB-CNM   

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Micro and Nanotechnology research for you

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  • IMB-CNM Microelectronics Research and Development centre in Spain

  • Research groups dedicated to the field of Micro and Nano Integrated Systems

  • Integrated Clean room for Micro and Nano fabrication

  • IMB-CNM scientific papers published in journals

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Welcome to the IMB-CNM


Welcome to the web page of the Barcelona Microelectronics Institute of the National Microelectronics Centre-CSIC.

Micro/Nano electronics, Photonics and Smart Systems have been identified by the European Commission as a fundamental part of the KETS-Key Enabling Technologies, which are the basis for the improvement of the innovation capability of the European industry. These technologies have a high economic potential and the capability to contribute to solve the current societal challenges.

Electronic systems are part of our lives for several decades now. The evolution of microelectronics has enabled its introduction as an essential part of multiple products that can benefit any sector of the economy, by including properties such as a higher product intelligence or more sustainability.

The IMB-CNM aims to contribute to these goals with a high level set of researchers and facilities, unique in the South of Europe. Not only we can offer our know-how to collaborate with you on designing and fabricating new micro and nanoelectronics components, circuits and systems, but also we can provide you education and training at the different stages of your scientific or engineering career. IMB-CNM is a research centre belonging to CSIC, placed in Barcelona and, more specifically being part of the Campus of Excellence of the Universitat Autònoma de Barcelona (UAB), that is a cluster of scientific activity that may perfectly fit with your needs.

We thank you for visiting the web site of our institute and we hope that the R&D activities that we are doing can be of your interest. Please feel free to contact us for any collaboration or visit in which you may be thinking of.

News & Events

Day of Women and Girls in Science 2019

The United Nations have proclaimed February 11 the International Day of Women and Girls in Science aiming to ensure full and equal access to and participation in science for women and girls.
#csic #diamujeryninaenciencia #11F2019 #WomenInScience

 NEWS  2019-02-11 

IMB-CNM talks: Fabrication of superior 2D and 3D nano-devices using NanoFrazor lithography - Dr. Zhengming Wu

Sala de Actos Pepe Millán, IMB-CNM, Campus UAB.
15/02/2019 11:30 a.m.

 EVENTS  2019-02-11 

2nd Call of the DOC-FAM MSCA COFUND project for 12 ESR Fellowships

The Second Call of the COUFND Marie Skłodowska-Curie DOCtoral training programme in Functional Advanced Materials (DOC-FAM) will open on October 8, 2018. In this call, a total of 12 fellowships are available to Early-Stage Researchers (ESRs) in order to conduct a PhD in one of the research centers involved in the programme, for a total of 36 months.

 NEWS  2018-10-05 

Resumen charla Neus Sabaté "Las científicas cuentan"

Si no pudieron asistir anoche a la charla de Nieves Sabaté dentro del ciclo "Las científicas cuentan", aquí tenéis un pequeño resumen de su investigación de excelencia a Institute of Microelectronics of Barcelona CNM.

 NEWS  2018-09-19 

The Chairwoman of the CSIC, named president of D+T Microelectronics

The Chairwoman of the Superior Council of Scientific Research (CSIC), Rosa Menéndez, has been named President of the Economic Interest Group D+T Microelectronics, during the ordinary assembly held last Friday in Barcelona.

 NEWS  2018-06-18 

Recent publications

CPT1C in the ventromedial nucleus of the hypothalamus is necessary for brown fat thermogenesis activation in obesity
R. Rodríguez-Rodríguez et al.; Molecular Metabolism. Carnitine palmitoyltransferase 1C (CPT1C) is implicated in central regulation of energy homeostasis. Our aim was to investigate whether CPT1C in the ventromedial nucleus of the hypothalamus (VMH) is involved in the activation of brown adipose tissue (BAT) thermogenesis in the early stages of diet-induced obesity.


Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging
X. Perpiñà et al.; IEEE Transactions on Instrumentation and Measurement.The viability of using off-chip single-shot imaging techniques for local thermal testing in integrated radio frequency (RF) power amplifiers (PAs) is analyzed. With this approach, the frequency response of the output power and power gain of a Class A RF PA is measured, also deriving information about the intrinsic operation of its transistors. To carry out this paper, the PA is heterodynally driven, and its electrical behavior is down converted into a lower frequency thermal field acquirable with an InfraRed lock-in thermography (IR-LIT) system. After discussing the theory, the feasibility of the proposed approach is demonstrated and assessed with thermal sensors monolithically integrated in the PA. As crucial advantages to RF-testing, this local approach is noninvasive and demands less complex instrumentation than the mainstream commercially available solutions.


Thermal Management Strategies for Low and High Voltage Retrofit LED Lamp Drivers
X. Perpiñà et al.; IEEE Transactions on Power Electronics. Several thermal management strategies for LED drivers designed for high lumen retrofit LED lamps are studied by simulation and experimentation means. Depending on the driver output, two scenarios are analyzed: Low Voltage-High Current (18V-620mA) and High Voltage-Low Current (110V-85mA). Experiments (infrared thermography and thermocouples) and multiscale simulation approaches are used to assist both the lamp and driver board thermal design, as well as the driver proper integration in the lighting system. As a result, a heatsink based on an Aluminum hollow cylinder with polymer axial fins is designed and evaluated. The heatsink assessement is carried out with an LED board, in which the LED junction temperature is modeled and extracted by monitoring the LED board backside temperature. Additional experimentation to better integrate the driver is performed aiming at reducing the contact thermal resistance between the driver and the heatsink and improving the heat removal in the driver housing by including a material with a high thermal conductivity (i.e., dry silica sand or magnesium oxide powder). The proposed solution reduces the LED junction temperature up to 18% with respect to a reference lamp, whereas both drivers depict working temperatures around or below 125°C, when a working temperature of 90°C is considered.


Solid State Relay Solutions for Induction Cooking Applications based on Advanced Power Semiconductor Devices
M. Fernández et al.; IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, vol. 66, no. 3, March 2019, pp. 1832-1841. This paper focuses on providing an improved and efficient alternative to electromechanical relays (EMRs) in view of the growing demand characteristics for an effective power multiplexing in induction heating applications. A major analytical approach to the design and implementation of bidirectional switches (BDSs) based on different power semiconductor technologies is presented, including thorough static and dynamic characterizations. Emerging gallium nitride high-electron-mobility transistors (GaN HEMTs) and silicon carbide (SiC)-based devices are identified as potential candidates for the mentioned applications.


Novel impedimetric aptasensor for label-free detection of Escherichia coli O157:H7
Sergi Brosel-Oliu et al.; Sensors & Actuators: B. Chemical V. 255 P3 (2018) pp. 2988-2995. A novel impedance-based aptasensor for detection of E. coli O157:H7 is proposed. The limit of detection of the biosensor is around 102 cfu·mL-1 with a detection time of 30 minutes. The selectivity of the developed aptasensor is demonstrated in regard to other bacterial strains. Regeneration protocol for the aptasensor, to be employed more than once, has been developed


Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
Alberto Rodríguez-Fernández et al.; IEEE Trans. Electron Dev. 64 (8) pp 3159-3166 (2017). The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current–voltage characteristics of Ni/HfO2/n+-Si RRAM devices has been investigated. In the case of 5-nm-thick oxide devices, a self-rectifying ratio of three orders of magnitude is observed after substrate injection forming (SIF) with current compliance below 500 μA. However, devices subjected to gate injection forming (GIF) do not exhibit such rectifying feature. This distinctive behavior for SIF is ascribed to the formation of a Schottky-like contact in between the Ni-based conducting filament and the semiconductor electrode.


Full Review William Hill