Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current–voltage characteristics of Ni/HfO2/n+-Si RRAM devices has been investigated.
Impedimetric label-free sensor for specific bacteria endotoxin detection by surface charge registration
An impedimetric sensor based on a three dimensional electrode array modified with consecutive deposition of Con A-glycogen-Con A layers was used for label-free detection of bacterial endotoxin: lipopolysaccharide (LPS) from Escherichia coli.
Compact Sampling Device Based on Wax Microfluidics
This work reports on the design, fabrication and performance of a low-cost, self-contained sampling device based on a wax microfluidics technology. This sampler delivers leak- and contamination-free performance that ensures the integrity of the collected samples.
Museu de Microelectrònica Zenon Navarro
El Museu de Microelectrònica i Nanoelectrònica Zenon Navarro exhibeix equips utilitzats per al disseny, fabricació i mesura de dispositius electrònics.
Zenon Navarro Microelectronics Museum
The Zenon Navarro Microelectronics Museum displays equipment used for the design, fabrication and measurement of electronic devices.
Museo de Microelectrónica Zenon Navarro
El Museo de Microelectrónica Zenon Navarro exhibe al público equipos utilizados para el diseño, fabricación y medición de dispositivos electrónicos.
Highly Anisotropic Suspended Planar-Array Chips with Multidimensional Sub-Micrometric Biomolecular Patterns
The physical and chemical properties of silicon chips can be tuned to address the requirements of the research. The control of the physical anisotropy from fabrication allows obtaining chips with the desired aspect ratio, branching, faceting and size.
Thermal Phase Lag Heterodyne Infrared Imaging for Radio Frequency Integrated Circuits Performance Degradation Analysis
With thermal phase lag measurements, current paths are tracked in a Class A Radio Frequency (RF) power amplifier at 2 GHz. The phase lag maps evidence with a higher sensitivity than thermal amplitude measurements, an input-output loop due to a substrate capacitive coupling.
P-GaN HEMTs Drain and Gate Current Analysis under Short-Circuit
Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels.
Short-Circuit Study of Medium Voltage GaN Cascodes, P-GaN HEMTs and MISHEMTs
This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs): cascodes, p-GaN, and GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs).