CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS
Instituto de Microelectrónica de Barcelona

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The nanolithography capabilities of IMB-CNM are included into the Integrated Micro and Nanofabrication Clean Room.

  

TECHNIQUES

  • Electron beam lithography (EBL)
  • AFM based nanofabrication
  • Nanoimprint lithography
 

EQUIPMENT

  
AFM microscope.
  • Nanoscope IV controller and Dimension 3100 head from Veeco
  • Close-loop scanner
  • Modules for electrical characterization (TUNA and SCM) and thermal characterization (SThM)
  • Extension for nanofabrication / nanolithography (NANOMAN)
  • Sample size up to a 150 mm wafer

 

 
Electron beam lithography

- RAITH 150 (TWO) dedicated electron beam lithography system, for up to 100 mm wafers. 

- System based on a SEM LEO 1530 microscope and RAITH ELPHY PLUS  controller and software

  • Beam blanker
  • Sample size up to a 150 mm wafer
  
Nanoimprint lithography (NIL)

Obducat thermal nanoimprint system

  • Sample size up to 150 mm wafers
  • Maximum pressure: 80 bars and temperature up to 350 ºC

Obducat UV + thermal nanoimprint system (from ICN-CIN2)

  • Sample size 50 mm wafers

NPS300 (SET) nanoimprint step and flash (UV+thermal) system

 

  
Focused Ion Beam

 

Zeiss 1560XB Cross Beam (from ICN-CIN2)

  • Sample size up to a 150 mm wafer
  • Circuit editing capability
  • Nanomachining capabilities

  

PROCESSES

Nanopatterning by AFM
  • Nanopatterning by AFM local oxidation
  • Maximum size of pattern 30 µm x 30 µm
  • Minimum resolution 10 nm
  • Applicable to the following surfaces:
    - silicon
    - aluminium
    - other anodizable materials
 
EBL nanolithography
  • Lithography on PMMA
  • Resolution:50 nm
  • Maximum field dimension: 200 µm x 200 µm
 
Nanoimprint lithography
  • Imprinting of polymers (100 - 300 nm thickness) on different surfaces
  • Resolution from 100 nm up to 50
  • Imprinting area up to 4"
  • "In house" technology for mould fabrication and conditioning
  


  

CHARACTERIZATION

  
Topographical characterization by AFM.
  • Maximum sample size: 6 '' wafer
  • Maximum range of images: 30 µm (X) x 30 µm (Y) x 4 µm (Z)
  • Lateral resolution (depending on surface features): 1 nm
  • Vertical resolution: 0.1 nm AFM
Local electrical characterization
  • Electrical current mapping of the surface (0.1 pA - 100 pA)
  • Lateral resolution: 10nm
AFM local thermal characterization.
  • Surface temperature mapping (From room temperature to 100 ºC ± 0.5 ºC)
  • Resolution: 150 nm
SEM characterization.
  • SEM characterisation of whole wafers up to 6''

 

CONTACT

Xavier Borrisé ( Esta dirección electrónica esta protegida contra spambots. Es necesario activar Javascript para visualizarla )

 

 
Sede: Campus UAB. Cerdanyola del Vallès. Barcelona. E-08193 (Españ
Tel:(+34) 93 594 7700 Fax:(+34) 93 580 1496