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 | The nanolithography capabilities of IMB-CNM are included into the Integrated Micro and Nanofabrication Clean Room. |
TECHNIQUES- Electron beam lithography (EBL)
- AFM based nanofabrication
- Nanoimprint lithography
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EQUIPMENT | AFM microscope. - Nanoscope IV controller and Dimension 3100 head from Veeco
- Close-loop scanner
- Modules for electrical characterization (TUNA and SCM) and thermal characterization (SThM)
- Extension for nanofabrication / nanolithography (NANOMAN)
- Sample size up to a 150 mm wafer
| | Electron beam lithography
- RAITH 150 (TWO) dedicated electron beam lithography system, for up to 100 mm wafers. - System based on a SEM LEO 1530 microscope and RAITH ELPHY PLUS controller and software - Beam blanker
- Sample size up to a 150 mm wafer
|  | Nanoimprint lithography (NIL)
Obducat thermal nanoimprint system - Sample size up to 150 mm wafers
- Maximum pressure: 80 bars and temperature up to 350 ºC
Obducat UV + thermal nanoimprint system (from ICN-CIN2)
NPS300 (SET) nanoimprint step and flash (UV+thermal) system | 
| Focused Ion Beam Zeiss 1560XB Cross Beam (from ICN-CIN2) - Sample size up to a 150 mm wafer
- Circuit editing capability
- Nanomachining capabilities
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PROCESSESNanopatterning by AFM- Nanopatterning by AFM local oxidation
- Maximum size of pattern 30 µm x 30 µm
- Minimum resolution 10 nm
- Applicable to the following surfaces:
- silicon - aluminium - other anodizable materials
|  | EBL nanolithography- Lithography on PMMA
- Resolution:50 nm
- Maximum field dimension: 200 µm x 200 µm
|  | Nanoimprint lithography - Imprinting of polymers (100 - 300 nm thickness) on different surfaces
- Resolution from 100 nm up to 50
- Imprinting area up to 4"
- "In house" technology for mould fabrication and conditioning
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CHARACTERIZATION Topographical characterization by AFM.- Maximum sample size: 6 '' wafer
- Maximum range of images: 30 µm (X) x 30 µm (Y) x 4 µm (Z)
- Lateral resolution (depending on surface features): 1 nm
- Vertical resolution: 0.1 nm AFM
Local electrical characterization - Electrical current mapping of the surface (0.1 pA - 100 pA)
- Lateral resolution: 10nm
AFM local thermal characterization.- Surface temperature mapping (From room temperature to 100 ºC ± 0.5 ºC)
- Resolution: 150 nm
SEM characterization.- SEM characterisation of whole wafers up to 6''
CONTACTXavier Borrisé (
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