Institute of Microelectronics of Barcelona IMB-CNM   

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The aim of the group is to contribute to the research and development of technologies and applications of radiation detectors through design, simulation, fabrication and characterization of silicon radiation sensors; readout electronics; interconnections; implementation of complete systems and study of the effects of radiation. The fields of application in which these developments are implemented are particle physics, nuclear physics, synchrotron, security, space, dosimetry and medical imaging.

The RDG has considerable expertise in the design, fabrication, and Flip-chip packaging of silicon radiation detectors for strip and pixel sensors and has developed a novel technology of double-side 3D detectors. The RDG also has extensive experience in the study of the radiation hardness of microelectronic technologies. The group has its own test laboratory to fully characterize radiation detectors and electronics.

It is currently a reference for R&D in Europe in the radiation sensors fields and has participated in large research programs in High Energy Physics (HEP) at international level (e.g. LHC, LHC Upgrade, Linear Collider, etc). The establishment of a complete detector technology in 6 inches wafers is underway. This will allow the contribution both in research and prototyping in the new HEP developments that require larger sensors and higher precision. The group is also consolidating the most recent research lines in microdosimetry, nuclear physics and security applications. In addition, it is strengthening its capabilities in technological and electrical simulations of microelectronic devices and processes in order to increase the speed and quality of these developments.

Concerning Flip-chip packaging the group has developed a bump electroplating technique using Sn/Ag as a solder material and TiW/Cu and Ni/Au as UBM. In addition, the group runs a SET FC150 flip-chip packaging tool used for pixel detectors packaging.

     
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