P-GaN HEMTs Drain and Gate Current Analysis under Short-Circuit; M. Fernández et al.; IEEE Electron Device Letters, 38 (4), pp. 505-508 (2017). Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under short-circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). As a main observation, a strong drain current reduction (> 70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs
Robust L-malate bienzymatic biosensor to enable the on-site monitoring of malolactic fermentation of red wines ; P. Giménez-Gómez et al.; Anal. Chim. Acta 954 (2017) 105-113. The development of an amperometric biosensor for L-malate determination showing long-term stability is reported in this work. The biosensor is based on a thin-film gold electrochemical transducer and a three-dimensional membrane of polypyrrole entrapping malate dehydrogenase and diaphorase enzymes. It was applied to monitor the malolactic fermentation of three red wines, showing a good agreement with the standard colorimetric method.