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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices; Alberto Rodríguez-Fernández et al.; IEEE Trans. Electron Dev. 64 (8) pp 3159-3166 (2017). The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current–voltage characteristics of Ni/HfO2/n+-Si RRAM devices has been investigated. In the case of 5-nm-thick oxide devices, a self-rectifying ratio of three orders of magnitude is observed after substrate injection forming (SIF) with current compliance below 500 μA. However, devices subjected to gate injection forming (GIF) do not exhibit such rectifying feature. This distinctive behavior for SIF is ascribed to the formation of a Schottky-like contact in between the Ni-based conducting filament and the semiconductor electrode.

Impedimetric label-free sensor for specific bacteria endotoxin detection by surface charge registration; Sergi Brosel-Oliu et al.; Electroquimica Acta, 2017, vol.243, pp.142-151 An impedimetric sensor based on a three dimensional electrode array modified with consecutive deposition of Con A-glycogen-Con A layers was used for label-free detection of bacterial endotoxin: lipopolysaccharide (LPS) from Escherichia coli. Presented biosensor is able to detect bacterial LPS in a very short detection time (20 min) with 2 μg mL−1 limit of detection, which is much lower than reported for other biosensors with Con A.

Compact Sampling Device Based on Wax Microfluidics; María Díaz-González et al.; Sensors and Actuators B 251 (2017) 93–98 This work reports on the design, fabrication and performance of a low-cost, self-contained sampling device based on a wax microfluidics technology. This sampler delivers leak- and contamination-free performance that ensures the integrity of the collected samples. Thanks to its small dimensions and low power requirements, this device is well suited for collecting samples on-board of small aerial or aquatic drones.

Thermal Phase Lag Heterodyne Infrared Imaging for Radio Frequency Integrated Circuits Performance Degradation Analysis; X. Perpiñà et al.; Appl. Phys. Lett., 101 (2) 094101 (2017). With thermal phase lag measurements, current paths are tracked in a Class A Radio Frequency (RF) power amplifier at 2 GHz. The phase lag maps evidence with a higher sensitivity than thermal amplitude measurements, an input-output loop due to a substrate capacitive coupling. This limits the amplifier’s performance, raising the power consumption in certain components. Other information relative to local power consumption and amplifier operation is also inferred. This approach allows the local non-invasive testing of integrated systems regardless of their operating frequency.

Highly Anisotropic Suspended Planar-Array Chips with Multidimensional Sub-Micrometric Biomolecular Patterns; J.P. Agusil et al.; Adv. Funct. Mater. 2017. The physical and chemical properties of silicon chips can be tuned to address the requirements of the research. The control of the physical anisotropy from fabrication allows obtaining chips with the desired aspect ratio, branching, faceting and size. Subsequent surface modification via wet chemistry or contact printing added two- and 3-dimensional chemical features on each microparticle. The combination of physical and chemical anisotropies provides the mean to create a myriad of customized microparticles.

P-GaN HEMTs Drain and Gate Current Analysis under Short-Circuit; M. Fernández et al.; IEEE Electron Device Letters, 38 (4), pp. 505-508 (2017). Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under short-circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). As a main observation, a strong drain current reduction (> 70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs

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