Institute of Microelectronics of Barcelona IMB-CNM   

IMB-CNM Facebookchannel IMB-CNM Linkedin channel IMB-CNM Youtube channel IMB-CNM Instagram channel IMB-CNM Pinterest channel IMB-CNM RSS channel Contact with IMB-CNM Login to IMB-CNM Intranet

Micro and Nanotechnology research for you



The Power Devices Electrical Characterization Laboratory covers the main needs of the Power Devices and Systems research group of IMB-CNM in terms of electrical assessment of the power devices developed in the Clean Room. In addition, it is also open for industrial and/or academic collaborations such as the characterization of commercial devices under specific conditions not provided in datasheets.

Main activities

The main activities performed in the Power Devices Electrical Characterization Laboratory are:

  • Electrical validation of new power devices developed in the Clean Room.
  • Electrical analysis of commercial power devices.
  • Development of new techniques for electrical characterization.
  • Development of integrated power systems.
Techniques
  • Steady-state electrical characterization of power devices at different temperatures:
    • Voltage-Current curves (forward and blocking)
    • Electrical parameters extraction (on-resistance, threshold voltage, etc.).
    • Capacitance-Voltage curves
    • Calibration of temperature sensitive parameters (up to 400ºC)
    • On-wafer mapping with semi-automatic probe stations
  • Dynamic electrical characterization of power devices at different temperatures:
    • Switching tests and dynamic parameters extraction (turn-on and turn-off times, switching losses, etc.).
  • Reliability/ruggedness testing of power devices:
    • Surge current test
    • Power cycling
    • Short-circuit capability
  • Integrated power systems development:
    • Assembly of integrated power systems (power modules).
    • Optical inspection of integrated power systems (metallization analysis, etc.).
  • Development of specific measurement systems (switching boards, etc.).
  • Development and production of probe cards for automatic on-wafer mapping of power devices.
   
   
Equipment
  • Static characterization of power devices:
    • Semiautomatic wafer probers with hot chuck (300ºC)
    • Source-measurement units (up to 15kV and 10A)
    • CV measurement equipment
    • Curve tracers (up to 3300 V – 400 A)
    • Instrumentation controllers (GPIB bus)
  • Dynamic characterization of components:
    • Switching times
    • Power switching losses
    • Short-circuit characterization
    • Gate driving characteristics)
    • Parasitic capacitances extraction (up to 800 V)
  • Surge and ESD characterization equipment
  • Equipment for the design, development and characterization of power systems
Contact person

This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Full Review William Hill www.wbetting.co.uk