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Institute of Microelectronics of Barcelona IMB-CNM   

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Techniques
  • Metal and dielectric wet (isotropic) etching
  • Surface cleaning
  • Photoresist stripping: oxygen plasma and wet stripping
Equipment


Metal and dielectric wet etching
  • 11 baths and 6 DI water overflow rinse tanks for CMOS compatible wafers until 150 mm.
  • 6 baths and 2 DI water overflow rinse tanks for wafers with contaminant metals until 150 mm.
  • 2 Rinse and Dryer (R&D) devoted to CMOS compatible wafers of 100 mm and 1 R&D for 150 mm wafers.
  • 1 R&D for wafers with contaminant metals of 150 mm.
  • 2 ovens for drying and photoresist bakes.
Surface cleaning
  • 2 baths and 1 DI water overflow rinse tanks for CMOS compatible wafers until 150 mm.
  • 2 baths and 1 DI water overflow rinse tanks for wafers with contaminant metals until 150 mm.
  • 2 R&D (one for CMOS compatible wafers and another for wafers with contaminant metals) for 100 mm wafers.


Wet and oxygen plasma photoresist stripping
  • 2 ultrasonic baths for solvent and 1 DI water overflow rinse tank for CMOS compatible wafers.
  • 2 baths for wet photoresist stripping for wafers with contaminant metals and 1 DI water overflow rinse tank for wafers with contaminant metals until 150 mm.
  • PVA Tepla 300SA plasma asher for photoresist stripping with oxygen plasma for CMOS compatible wafers.
  • Tepla 300E plasma asher for photoresist stripping with oxygen plasma for wafers with contaminant metals.
Processes
Ething and stripping of dielectrics
  • Etching and stripping of SiO2 in HF mixtures of different concentrations.
  • Isotropic etching of silicon and polysilicon based on mixtures of HNO3 y HF.
  • Etching of Si3N4 in H3PO4
  • Thin film etching of TiO2, Al2O3 and HfO2 in HF mixtures.
Etching of metals
  • Al etching based on mixtures of HNO3 y H3PO4
  • Au etching based on mixtures of I2
  • Ni etching in HNO3
  • Ti etching based on mixtures of propilenglycol and HF
Surface cleanings
  • Organics, particles and remaining traces of metallic (ionic) contaminants cleanings.
  • Piranha mixture, oxide stripping and RCA cleaning.
  • Cleanings with solvents (acetone and isopropanol).
Wet and oxygen plasma photoresist stripping
  • Photoresist stripping in acetone.
  • Photoresist stripping in acid.
  • Photoresist stripping in stripper (basic mixture).
  • Photoresist stripping in oxygen plasma.
Contact

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