Institute of Microelectronics of Barcelona IMB-CNM   

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Metallization and Implantation is one of the process areas included at IMB-CNM Integrated Micro and Nanofabrication Clean Room.

Surface : Around 120 m2
Class 10000

Available technologies
  • Physical Vapor Deposition (PVD): Sputtering and Evaporation.
  • Ion Implantation: Medium current implantation.
Equipment
Sputtering
photo1 KENOSISTEC KS800H

Sputtering system to deposit metallic layers on 100mm or 150mm wafers. Process chamber with three (200mm) circular planar magnetron cathodes. Available targets: Al/0.5% Cu, Ti and Cu. Possibility to process CMOS or MNC wafers. DC power. Sputter etching (RF). Semi-automatic loading system.

photo2 Material Research Corporation-MRC 903

Sputtering system to deposit metallic layers. Process chamber with three cathodes (two are rectangular planar magnetron-type and the other is a rectangular planar diode). Available targets: Au, Ni, Ti. Cleanliness/contamination level: it’s considered MNC, not suited for CMOS line process/samples.. DC power for Ti/Ni and RF power for Au. Sputter etching (RF). Semi-automatic loading system.

photo3 KENOSISTEC KS500C

Sputtering system to deposit metallic layers on 100mm or 150mm wafers. Process chamber with three cathode (75mm) magnetron circular planar in confocal configuration. Available targets: W, Ti, Ta. Possibility to process CMOS or MNC wafers. DC power. Sputter etching (RF). Semi-automatic loading system.

photo4 LEYBOLD HERAEUS Z-550-SM

Sputtering system to deposit metallic layers on 4 inches wafers. Process chamber with a circular planar magnetron cathode. Available targets: Al/ 0.5% Cu, Al/ 0.5% Cu / 0.75% Si and TaSi2. Possibility to process CMOS or MNC wafers. DC power. Sputter etching (RF). Manual loading system.

photo5 BIO RAD E-5000 Polar Division

Sputtering system to deposit gold layers for scanning electron microscopy. Possibility to change distance and current. Stopwatch to time control.

 
Evaporation
photo6 OERLIKON UNIVEX 450B

E-beam and thermal evaporator. One electron gun source with four pockets and two thermal sources. Materials deposited: Al, Ti, Cr, Ag, Pt, Au, Ni, Sn, Ta, Cu, C, B, Fe, ITO, LiF, Mo, Al2O3, W, Ca3SiO5 and CB4. Possibility to heat samples up to 500ºC. Non-compliant coatings. Residual gas Analyzer. Available deposition in N2, O2 and Ar ambients. Maximum sample area size: 150mm. Maximum of 4 wafers per charge. Cleanliness/contamination level: it’s considered MNC, not suited for CMOS line process/samples. Manual loading system.

photo7 KENOSISTEC KE 500

E-beam evaporator. One electron gun source with four pockets. Materials deposited: Ti, Cr and Al. Non-compliant coatings. Maximum substrate diameter: 150mm. One wafer per charge. Possibility to rotate the sample. Cleanliness/contamination level: it’s suited for CMOS line process/samples. Manual loading system.

 
Implantation
photo8 Ion Implanter IBS IMC 210RD

Medium current implanter used to introduce dopants into the wafers.

Precursors: BF3, SiF4, N2, Ar, CO2, He /Ar, As, P, Mg, AlCl3, GeS2 and H2O.
Implanted doses from 1.0x1011 to 1.0x1017 at/cm2.
Energy from 1 to 210 KeV in simple charged.
Angle of incidence (tilt): From 0 to 15 ° at standard chamber and from 0 to 10º at R & D chamber (limited by software).
Maximum wafer diameter: 150 mm.
Temperature: Possibility to heat the wafer up to 500 ° C.
Cleanliness/contamination level: It can only process CMOS samples.

photo9 Ion Implanter EATON NV4206

Medium current implanter used to introduce dopants into the wafers.

Precursors: BF3, SiF4, Ar, N2, P and As
Implanted doses from 1.0x1012 to 5.0x1015 at/cm2.
Energy between 30 and 150 KeV.
Angle of incidence: (tilt): 1-15º limited to 7º on control system software.
Maximum wafer diameter: 100 mm.
Cleanliness/contamination level: It can only process CMOS samples.

 
Characterization
Sheet resistance four point probe. Characterization tools used to measure sheet resistance of different layers.
photo10 Four Dimensions Inc

suited for CMOS line samples up to 100mm. Auto Map System Model 280.Automatic Sheet Resistance probe Model 280.

photo11 Kulicke and Soffa Model 3007

Hewlett Packard 3455 Digital Voltmeter. Manual Sheet Resistivity Probe: MNC tool, not suited for CMOS line samples.

photo12 Chang Min Tech Company Ltd SR2000N

suited for CMOS line samples up to 100mm.

Contact person

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