Institute of Microelectronics of Barcelona IMB-CNM   

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Dry etching is one of the process areas included in the Integrated Micro and Nanofabrication Clean Room of IMB-CNM.

Surface: 120 m2.
Class 1000.  

Available technologies
  • Silicon Etching (Si, Doped Poly ) Anisotropic and isotropic dry etch
    Chemistry : Cl2, HBr, SF6, C4F8, O2
  • Metal Etching (Al,W,Ti,TiN,Cr)
    Chemistry : Cl2, BCl3, HBr
  • Dielectric Etching (SiO2, Si3N4) Process : Contact (Poly C/T, Metal C/T, Via),
    SpacerChemistry : fluoro-compounds (CF4, C4F8, CHF3, C2F6, CH4)

  
  

Equipment

The systems available in the plasma etching area are:

  • Three high density plasma etching devices (RIE-ICP) suitable for 4-inch wafers
  • Three CCP, one of them MERIE

ALCATEL GIR-160

Manual single chamber for 4’’ wafers
Parallel plate RIE reactor, 13.56 MHz
SF6, CHF3, CF4, O2, He, N2
Etching SiO2, Si3N4, Si and poly-Si

 

DRY TEK QUAD 484

RIE
Automatic multichamber
3 chambers Parallel plate reactor,
13.56 MHz
1 μwave assisted chamber
25 wafers 4’’
OpticalEPD
BCl3, Cl2, C2F6, O2 , SF6 , N2H2 (10% H2)
CF4, He
Etching oxide, nitride, poly-Si and Al, plus photoresist stripping

 

APPLIED MATERIALS PRECISION 5000MARK II

M.E.R.I.E., 13.56 MHz
Automatic cluster 3 chambers
25 wafers 4’’ and 6’’
Optical EPD
HBr, Cl2, O2, He, CHF3, Ar,CF4, C2F6, C4F8
Etching poly-Si, oxinitride and ALD thin films ( Al2O3, HfO2 and TiO2)

 

ALCATEL 601 E

DRIE –ICP
Automatic single chamber 4’’ wafers
SF6, C4F8, He, O2
Bosch process system for deep-vertical etching of silicon
Cryogenic process at -110ºC
etching oxide, poly-Si, SiC and Deep Si

 

ALCATEL AMS 110 DE

DEEP RIE ‐ ICP
Automatic single chamber 4’’ wafers
Bosch process system for deep-vertical etching of silicon
OpticalEPD
SF6, C4F8, He, O2, CH4, Ar
Silicon, dielectrics, polymersALD thin films ( Al2O3, HfO2 and TiO2) dry etch for wafers with contaminant metals

 

OXFORD S-100

DRIE-ICP
Automatic multichamber 4’’ wafers
N2, O2, He, SF6, Cl2, HBr, BCl3
Al etching and photoresist stripping

 

Contact

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