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Institute of Microelectronics of Barcelona IMB-CNM   

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The nanolithography capabilities of IMB-CNM are included into the Integrated Micro and Nanofabrication Clean Room.

  • Electron beam lithography (EBL)
  • AFM based nanofabrication
  • Nanoimprint lithography
  • Focused Ion Beam (FIB)
 AFM microscope.
  • Nanoscope IV controller and Dimension 3100 head from Veeco
  • Close-loop scanner
  • Modules for electrical characterization (TUNA and SCM) and thermal characterization (SThM)
  • Extension for nanofabrication / nanolithography (NANOMAN)
  • Sample size up to a 150 mm wafer


Electron beam lithography

- RAITH 150 (TWO) dedicated electron beam lithography system, for up to 150 mm wafers.

- System based on a FE-SEM LEO 1530 microscope and RAITH ELPHY PLUS  controller and software

Nanoimprint lithography (NIL)

Obducat thermal nanoimprint system

  • Sample size up to 150 mm wafers
  • Maximum pressure: 80 bars and temperature up to 350 ºC

NPS300 (SET) nanoimprint step and flash (UV+thermal) system

Focused Ion Beam

Zeiss 1560XB Cross Beam (from ICN-CIN2)

  • Sample size up to a 150 mm wafer
  • Circuit editing capability
  • Nanomachining capabilities
Nanopatterning by AFM
  • Nanopatterning by AFM local oxidation
  • Maximum size of pattern 30 µm x 30 µm
  • Minimum resolution 10 nm
  • Applicable to the following surfaces:
    - silicon
    - aluminium
    - other anodizable materials
EBL nanolithography
  • Lithography on positive and negative resists
  • Resolution below 50 nm
  • Up to 6 inch wafers in stich fields
Nanoimprint lithography
  • Imprinting of polymers (100 - 300 nm thickness) on different surfaces
  • Imprinting of polymers foils (hot-embossing)
  • Resolution below 100 nm
  • Imprinting area up to 4"
  • "In house" technology for mould fabrication and conditioning
Focused Ion Beam (FIB)
  • Nanofabrication (Ga ions): Resolution below 100 nm
  • Gas Injection System (GIS): Pt, C, TEOS deposition & O2, F etching
  • Electrical Characterizaction capabilities (3 nanomanipulators & feedthrough)



Topographical characterization by AFM.

  • Maximum sample size: 6 '' wafer
  • Maximum range of images: 30 µm (X) x 30 µm (Y) x 4 µm (Z)
  • Lateral resolution (depending on surface features): 1 nm
  • Vertical resolution: 0.1 nm AFM

Local electrical characterization

  • Electrical current mapping of the surface (0.1 pA - 100 pA)
  • Lateral resolution: 10nm

AFM local thermal characterization.

  • Surface temperature mapping (From room temperature to 100 ºC ± 0.5 ºC)
  • Resolution: 150 nm

SEM characterization.

  • SEM characterisation of whole wafers up to 6''
  • EDS detector

FIB characterization.

  • FIB cross-sectioning
  • TEM lamela preparation


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Full Review William Hill